Title: Origin of traps and charge transport mechanism in hafnia
Authors: Islamov, D. R.
Gritsenko, V. A.
Cheng, C. H.
Chin, A.
National Chiao Tung University
Issue Date: 1-Dec-2014
Abstract: In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO2 was determined based on the charge transport experiments. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4903169
ISSN: 0003-6951
DOI: 10.1063/1.4903169
Volume: 105
Issue: 22
Appears in Collections:Articles

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