標題: Origin of traps and charge transport mechanism in hafnia
作者: Islamov, D. R.
Gritsenko, V. A.
Cheng, C. H.
Chin, A.
交大名義發表
National Chiao Tung University
公開日期: 1-十二月-2014
摘要: In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO2 was determined based on the charge transport experiments. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4903169
http://hdl.handle.net/11536/124103
ISSN: 0003-6951
DOI: 10.1063/1.4903169
期刊: APPLIED PHYSICS LETTERS
Volume: 105
Issue: 22
顯示於類別:期刊論文


文件中的檔案:

  1. 000346265200061.pdf