|Title:||Origin of traps and charge transport mechanism in hafnia|
|Authors:||Islamov, D. R.|
Gritsenko, V. A.
Cheng, C. H.
National Chiao Tung University
|Abstract:||In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO2 was determined based on the charge transport experiments. (C) 2014 AIP Publishing LLC.|
|Journal:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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