標題: Active Guard Ring to Improve Latch-Up Immunity
作者: Tsai, Hui-Wen
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic discharge (ESD) protection;guard ring;latchup
公開日期: 1-十二月-2014
摘要: A new design concept named as active guard ring and related circuit implementation to improve the latch-up immunity of ICs are proposed. Using additional sensing circuit and active buffer to turn ON the electrostatic discharge (ESD) protection transistors, the large-dimensional ESD (or I/O) devices can provide or receive extra compensation current to the negative or positive current perturbation during the latch-up current test. The new proposed solution has been verified in 0.6-mu m 5 V process to have much higher latch-up resistance compared with the conventional prevention method of guard ring in CMOS technology.
URI: http://dx.doi.org/10.1109/TED.2014.2363171
http://hdl.handle.net/11536/124102
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2363171
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 61
Issue: 12
起始頁: 4145
結束頁: 4152
顯示於類別:期刊論文


文件中的檔案:

  1. 000346573600030.pdf