標題: Material characteristics of InGaN based light emitting diodes grown on porous Si substrates
作者: Deng, Dongmei
Chiu, Ching-Hsueh
Kuo, Hao-Chung
Chen, Peng
Lau, Kei May
光電工程學系
Department of Photonics
關鍵字: Atomic force microscopy;High resolution X-ray diffraction;Metalorganic chemical vapor deposition;Nitride;Semiconductor III-V materials;Light emitting diode
公開日期: 15-Jan-2011
摘要: InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with 2 mu m thick crack-free GaN buffer layers were grown on porous Si substrates by metalorganic chemical vapor deposition. The material properties of LEDs grown on porous Si were studied in comparison with LEDs grown on grid-patterned Si. The (1 0 (1) over bar 5) asymmetric reciprocal space mapping (RSM) results indicate that LEDs grown on porous Si have less lattice tilt or distortion than those grown on grid-patterned Si. Both RSM and micro-photoluminescence (micro-PL) measurements suggest that multiple quantum wells grown on porous Si are less stressed. Mechanisms behind this partial strain relaxation are discussed. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.09.031
http://hdl.handle.net/11536/1241
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.09.031
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 315
Issue: 1
起始頁: 238
結束頁: 241
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000287558400054.pdf