標題: Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device
作者: Ismail, M.
Abbas, M. W.
Rana, A. M.
Talib, I.
Ahmed, E.
Nadeem, M. Y.
Tsai, T. L.
Chand, U.
Shah, N. A.
Hussain, M.
Aziz, A.
Bhatti, M. T.
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: multilevel resistive switching;Schottky emission;cerium oxide;oxygen vacancy
公開日期: 1-十二月-2014
摘要: Highly repeatable multilevel bipolar resistive switching in Ti/CeOx/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of CeO2 films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times (> 10(4) s) with an acceptable resistance ratio (similar to 102), enables the device for its applications in future non-volatile resistive random access memories (RRAMs). Based on the unique distribution characteristics of oxygen vacancies in CeOx films, the possible mechanism of multilevel resistive switching in CeOx RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.
URI: http://dx.doi.org/10.1088/1674-1056/23/12/126101
http://hdl.handle.net/11536/124094
ISSN: 1674-1056
DOI: 10.1088/1674-1056/23/12/126101
期刊: CHINESE PHYSICS B
Volume: 23
Issue: 12
顯示於類別:期刊論文


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