標題: The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN
作者: Shih, Cheng-Hung
Lo, Ikai
You, Shuo-Ting
Tsai, Cheng-Da
Tseng, Bae-Heng
Chen, Yun-Feng
Chen, Chiao-Hsin
Lee, Chuo-Han
Lee, Wei-I
Hsu, Gary Z. L.
電子物理學系
Department of Electrophysics
公開日期: 1-十二月-2014
摘要: We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (000 (1) over bar) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications. (C) 2014 Author(s).
URI: http://dx.doi.org/10.1063/1.4904030
http://hdl.handle.net/11536/124083
ISSN: 2158-3226
DOI: 10.1063/1.4904030
期刊: AIP ADVANCES
Issue: 12
顯示於類別:期刊論文


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