標題: Percolation conductivity in hafnium sub-oxides
作者: Islamov, D. R.
Gritsenko, V. A.
Cheng, C. H.
Chin, A.
交大名義發表
National Chiao Tung University
公開日期: 29-十二月-2014
摘要: In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfOx, x < 2) leads to percolation charge transport in such dielectrics. Basing on the model of Efros-Shklovskii percolation theory, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. Based on the percolation theory suggested model shows that hafnium sub-oxides consist of mixtures of metallic Hf nanoscale clusters of 1-2 nm distributed onto non-stoichiometric HfOx. It was shown that reported approach might describe low resistance state current-voltage characteristics of resistive memory elements based on HfOx. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4905308
http://hdl.handle.net/11536/124065
ISSN: 0003-6951
DOI: 10.1063/1.4905308
期刊: APPLIED PHYSICS LETTERS
Volume: 105
Issue: 26
顯示於類別:期刊論文


文件中的檔案:

  1. 000347171300032.pdf