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dc.contributor.authorLin, YHen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorLin, CTen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorLei, TFen_US
dc.date.accessioned2014-12-08T15:16:53Z-
dc.date.available2014-12-08T15:16:53Z-
dc.date.issued2006-04-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2006.871190en_US
dc.identifier.urihttp://hdl.handle.net/11536/12405-
dc.description.abstractThis paper presents a novel nonvolatile poly-Si-oxide-nitride-oxide-silicon-type Flash memory that was fabricated using hafnium oxide (HfO2) nanocrystals as the trapping storage layer. The formation Of HfO2 nanocrystals was confirmed using a number of physical analytical techniques, including energy-dispersive spectroscopy and X-ray photoelectron spectroscopy. These newly developed HfO2 nanocrystal memory cells exhibit very little lateral or vertical stored charge migration after 10, k program/erase (P/E) cycles. According to the temperature-activated Arrhenius model, we estimate that the activation energy lies within the range 2.1-3.3 eV. These HfO2 nanocrystal memories exhibit excellent data retention, endurance, and good reliability, even for the cells subjected to 10 k P/E cycles. These features suggest that such cells are very useful for high-density two-bit nonvolatile Flash memory applications.en_US
dc.language.isoen_USen_US
dc.subjectflash memoryen_US
dc.subjecthafnium oxide (HfO2)en_US
dc.subjectnanocrystalsen_US
dc.subjectnonvolatile memoriesen_US
dc.titleNovel two-bit HfO2 nanocrystal nonvolatile flash memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2006.871190en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume53en_US
dc.citation.issue4en_US
dc.citation.spage782en_US
dc.citation.epage789en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000236473500028-
dc.citation.woscount35-
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