標題: Novel two-bit HfO2 nanocrystal nonvolatile flash memory
作者: Lin, YH
Chien, CH
Lin, CT
Chang, CY
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: flash memory;hafnium oxide (HfO2);nanocrystals;nonvolatile memories
公開日期: 1-Apr-2006
摘要: This paper presents a novel nonvolatile poly-Si-oxide-nitride-oxide-silicon-type Flash memory that was fabricated using hafnium oxide (HfO2) nanocrystals as the trapping storage layer. The formation Of HfO2 nanocrystals was confirmed using a number of physical analytical techniques, including energy-dispersive spectroscopy and X-ray photoelectron spectroscopy. These newly developed HfO2 nanocrystal memory cells exhibit very little lateral or vertical stored charge migration after 10, k program/erase (P/E) cycles. According to the temperature-activated Arrhenius model, we estimate that the activation energy lies within the range 2.1-3.3 eV. These HfO2 nanocrystal memories exhibit excellent data retention, endurance, and good reliability, even for the cells subjected to 10 k P/E cycles. These features suggest that such cells are very useful for high-density two-bit nonvolatile Flash memory applications.
URI: http://dx.doi.org/10.1109/TED.2006.871190
http://hdl.handle.net/11536/12405
ISSN: 0018-9383
DOI: 10.1109/TED.2006.871190
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 4
起始頁: 782
結束頁: 789
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