標題: Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETs
作者: Kao, HL
Chin, A
Liao, CC
Chen, CC
McAlister, SP
Chi, CC
奈米科技中心
Center for Nanoscience and Technology
關鍵字: lifetime;minimum noise figure (NFmin);model;RF noise;stress
公開日期: 1-Apr-2006
摘要: in this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure (NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-mu m MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NF in model, where the simulated results match the measured device characteristics well, both before and after electrical stress.
URI: http://dx.doi.org/10.1109/TED.2006.870284
http://hdl.handle.net/11536/12404
ISSN: 0018-9383
DOI: 10.1109/TED.2006.870284
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 4
起始頁: 636
結束頁: 642
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