標題: Extremely anisotropic single-crystal growth in nanotwinned copper
作者: Lu, Chia-Ling
Lin, Han-Wen
Liu, Chien-Min
Huang, Yi-Sa
Lu, Tien-Lin
Liu, Tao-Chi
Hsiao, Hsiang-Yao
Chen, Chih
Kuo, Jui-Chao
Tu, King-Ning
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-十月-2014
摘要: By electroplating of nearly unidirectionally < 111 >-oriented nanotwinned and fine-grained Cu on a Si wafer surface followed by annealing at 400-500 degrees C for up to 1 h, we grew many extremely large < 100 >-oriented single crystals of Cu with sizes ranging from 200 to 400 mu m. By patterning and annealing the nanotwinned Cu films, we grew an array of < 100 >-oriented single crystals of Cu with sizes ranging from 25 to 100 mu m on Si. In comparison, single-crystal nano-wire growth is a one-dimensional anisotropic growth process, in which the growth along the axial direction is much faster than in the radial direction. We report here a bulk-type two-dimensional crystal growth of an array of numerous < 100 >-oriented single crystals of Cu on Si. This growth process has the potential for microbump applications in three-dimensional integrated circuit-packaging technology for hand-held consumer electronic products.
URI: http://dx.doi.org/10.1038/am.2014.90
http://hdl.handle.net/11536/123977
ISSN: 1884-4049
DOI: 10.1038/am.2014.90
期刊: NPG ASIA MATERIALS
顯示於類別:期刊論文


文件中的檔案:

  1. 000344735900003.pdf