標題: Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
作者: Tsai, Jyun-Yu
Chang, Ting-Chang
Chen, Ching-En
Ho, Szu-Han
Liu, Kuan-Ju
Lu, Ying-Hsin
Liu, Xi-Wen
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Lu, Ching-Sen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 6-十月-2014
摘要: This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4896995
http://hdl.handle.net/11536/123970
ISSN: 0003-6951
DOI: 10.1063/1.4896995
期刊: APPLIED PHYSICS LETTERS
Volume: 105
Issue: 14
顯示於類別:期刊論文


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  1. 000344343900066.pdf