標題: Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors
作者: Lee, Ya-Ju
Yang, Zu-Po
Chen, Pin-Guang
Hsieh, Yung-An
Yao, Yung-Chi
Liao, Ming-Han
Lee, Min-Hung
Wang, Mei-Tan
Hwang, Jung-Min
光電系統研究所
Institute of Photonic System
公開日期: 20-Oct-2014
摘要: In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication. (C) 2014 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.22.0A1589
http://hdl.handle.net/11536/123968
ISSN: 1094-4087
DOI: 10.1364/OE.22.0A1589
期刊: OPTICS EXPRESS
Volume: 22
Issue: 21
起始頁: 0
結束頁: 0
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