標題: Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
作者: Liu, Kuan-Hsien
Chang, Ting-Chang
Chou, Wu-Ching
Chen, Hua-Mao
Tsai, Ming-Yen
Wu, Ming-Siou
Hung, Yi-Syuan
Hung, Pei-Hua
Hsieh, Tien-Yu
Tai, Ya-Hsiang
Chu, Ann-Kuo
Yeh, Bo-Liang
電子物理學系
電子工程學系及電子研究所
光電工程學系
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 21-十月-2014
摘要: This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel draininduced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast ID-VG and modulated peak/base pulse time ID-VD measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4897236
http://hdl.handle.net/11536/123965
ISSN: 0021-8979
DOI: 10.1063/1.4897236
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 116
Issue: 15
顯示於類別:期刊論文


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