標題: Perovskite Oxides as Resistive Switching Memories: A Review
作者: Panda, Debashis
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: resistive switching memory (RRAM);Perovskite oxides;nonvolatile memory;metal-insulator-metal;current-voltage
公開日期: 26-十月-2014
摘要: Numerous metal-insulator-metal systems demonstrate electrically induced resistive switching effects and have therefore been proposed as the basis for future nonvolatile memories. They combine the advantages of flash memories and dynamic random access memories while avoiding their drawbacks, such as operation speed, power consumption and device integration and scalable issues. The RRAM devices primarily operate at different resistance values to store the digital data and can keep the resistance state without any power supply. Recent advances in the understanding of the resistive switching mechanism are explained by a thermal or electrochemical redox reaction near the interface between the oxide and the top active metal electrode. Here we review the ongoing research and development activities on the perovskite based resistive switching memory devices. The possible switching mechanisms for the resistive switching are described. The effects of crystal structure, dopants, doping concentrations, annealing temperature, device structures and thickness of the active oxide layer on the resistive switching characteristics and consequently the memory performances are also discussed. From this insight, we take a brief look into different effect on the switching of the perovskite material systems.
URI: http://dx.doi.org/10.1080/00150193.2014.922389
http://hdl.handle.net/11536/123961
ISSN: 0015-0193
DOI: 10.1080/00150193.2014.922389
期刊: FERROELECTRICS
Volume: 471
起始頁: 23
結束頁: 64
顯示於類別:期刊論文


文件中的檔案:

  1. 000344528600004.pdf