標題: Submicron Cu/Sn Bonding Technology With Transient Ni Diffusion Buffer Layer for 3DIC Application
作者: Chang, Yao-Jen
Hsieh, Yu-Sheng
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: 3D integration;Cu/Sn bonding;transient Ni buffer layer
公開日期: 1-十一月-2014
摘要: A submicron Cu/Sn bonding with transient Ni buffer layer at 225 degrees C is demonstrated to overcome current 5-mu m Cu/Sn physical limitation. The 10-nm Ni layer suppresses immense Cu/Sn interdiffusion during heating step prior to major bonding process. When the temperature is close to the Sn melting point, the Ni layer dissolves and molten Sn gives successful submicrometer Cu/Sn bonding. The excellent mechanical strength and electrical performance of this scheme show the great potential for future and highly dense 3D interconnects.
URI: http://dx.doi.org/10.1109/LED.2014.2358212
http://hdl.handle.net/11536/123942
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2358212
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 11
起始頁: 1118
結束頁: 1120
顯示於類別:期刊論文


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  1. 000344588100016.pdf