Title: Submicron Cu/Sn Bonding Technology With Transient Ni Diffusion Buffer Layer for 3DIC Application
Authors: Chang, Yao-Jen
Hsieh, Yu-Sheng
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: 3D integration;Cu/Sn bonding;transient Ni buffer layer
Issue Date: 1-Nov-2014
Abstract: A submicron Cu/Sn bonding with transient Ni buffer layer at 225 degrees C is demonstrated to overcome current 5-mu m Cu/Sn physical limitation. The 10-nm Ni layer suppresses immense Cu/Sn interdiffusion during heating step prior to major bonding process. When the temperature is close to the Sn melting point, the Ni layer dissolves and molten Sn gives successful submicrometer Cu/Sn bonding. The excellent mechanical strength and electrical performance of this scheme show the great potential for future and highly dense 3D interconnects.
URI: http://dx.doi.org/10.1109/LED.2014.2358212
http://hdl.handle.net/11536/123942
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2358212
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 11
Begin Page: 1118
End Page: 1120
Appears in Collections:Articles


Files in This Item:

  1. 000344588100016.pdf