標題: Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor
作者: Fuh, Chur-Shyang
Liu, Po-Tsun
Huang, Wei-Hsun
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: In-Zn-Sn-O TFTs;high mobility TFTs
公開日期: 1-十一月-2014
摘要: This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 degrees C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm(2)/Vs, threshold voltage (V-th) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 degrees C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to 2.16x10(17) cm(-3)eV(-1) and 4.38x10(12) cm(-2) eV(-1), respectively. The positive bias stability of 400 degrees C annealed a-IZTO TFTs is also effectively improved with a Vth shift of 0.92 V.
URI: http://dx.doi.org/10.1109/LED.2014.2354598
http://hdl.handle.net/11536/123941
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2354598
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 11
起始頁: 1103
結束頁: 1105
顯示於類別:期刊論文


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  1. 000344588100011.pdf