標題: Design of ESD Protection Diodes With Embedded SCR for Differential LNA in a 65-nm CMOS Process
作者: Lin, Chun-Yu
Fan, Mei-Lian
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Differential low-noise amplifier (LNA);diode;electrostatic discharge (ESD);RF;silicon-controlled rectifier (SCR)
公開日期: 1-十一月-2014
摘要: The pin-to-pin electrostatic discharge (ESD) issue for a differential low-noise amplifier (LNA) was studied in this work. A new design of ESD protection diodes with an embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential LNA. The proposed ESD protection design was modified from the conventional ESD protection design without adding any extra device. The SCR path was established directly from one differential input pad to the other differential input pad so the pin-to-pin ESD robustness can be improved. This design had been verified in a 65-nm CMOS process. Besides, this design had been further applied to a 24-GHz LNA in the same 65-nm CMOS process. Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.
URI: http://dx.doi.org/10.1109/TMTT.2014.2356975
http://hdl.handle.net/11536/123934
ISSN: 0018-9480
DOI: 10.1109/TMTT.2014.2356975
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 62
Issue: 11
起始頁: 2723
結束頁: 2732
顯示於類別:期刊論文


文件中的檔案:

  1. 000344990700024.pdf