標題: Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs
作者: You, Yao-Hong
Su, Vin-Cent
Ho, Ti-En
Lin, Bo-Wen
Lee, Ming-Lun
Das, Atanu
Hsu, Wen-Ching
Kuan, Chieh-Hsiung
Lin, Ray-Ming
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Light-emitting diodes;GaN;Patterned sapphire substrates;Quantum-confined Stark effect
公開日期: 3-十一月-2014
摘要: This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).
URI: http://dx.doi.org/10.1186/1556-276X-9-596
http://hdl.handle.net/11536/123918
ISSN: 1556-276X
DOI: 10.1186/1556-276X-9-596
期刊: NANOSCALE RESEARCH LETTERS
顯示於類別:期刊論文


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