標題: Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor
作者: Chung, Pei-Kang
Yen, Shun-Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 14-十一月-2014
摘要: We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13 mu W and a power conversion efficiency higher than a resistor by more than 20%. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4901331
http://hdl.handle.net/11536/123904
ISSN: 0021-8979
DOI: 10.1063/1.4901331
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 116
Issue: 18
顯示於類別:期刊論文


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