標題: Fullerene-incorporation for enhancing the electron beam resist performance for contact hole patterning and filling
作者: You, HC
Ko, FH
Lei, TF
材料科學與工程學系奈米科技碩博班
電子工程學系及電子研究所
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: fullerene molecule;electron beam resist;contact hole patterning;filling capability
公開日期: 3-Apr-2006
摘要: The fullerene molecules such as C60 and C70 were incorporated in the commercial positive electron beam resist to investigate the performances for patterning and filling the contact holes at nanometer scale. The sensitivity, process window and contrast of the modified resist were improved, while the toluene dilution degraded the sensitivity. The electron beam dose affected the designed holes dimension, and the adulterated resist could print sub-50 nm holes pattern. We found the small amount (0.01-0.02% w/v) of fullerene molecules very effectively promoted the etch resistance and selectivity under fluoro-containing gases, and minimized the film stress. The etching resistance for C60 and C70 modification could be improved by 65% and 68%, respectively. Together with the fullerene-incorporated resist and the etching processes, the sub-50 nm contact hole could be achieved. In addition, the gap-filling and step coverage capability of titanium nitride into nanometer contact hole with chemical vapor deposition was better than physical vapor deposition. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2005.11.040
http://hdl.handle.net/11536/12389
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.11.040
期刊: THIN SOLID FILMS
Volume: 500
Issue: 1-2
起始頁: 214
結束頁: 218
Appears in Collections:Articles


Files in This Item:

  1. 000235764600035.pdf