標題: Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells
作者: Hsu, Ching-Hsiang
Chang, Edward Yi
Chang, Hsun-Jui
Yu, Hung-Wei
Hong Quan Nguyen
Chung, Chen-Chen
Maa, Jer-Shen
Pande, Krishna
材料科學與工程學系
照明與能源光電研究所
電子工程學系及電子研究所
Department of Materials Science and Engineering
Institute of Lighting and Energy Photonics
Department of Electronics Engineering and Institute of Electronics
關鍵字: III-V concentrator solar cell;copper metallization;ohmic contact;low cost
公開日期: 1-十二月-2014
摘要: Copper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4 x 10(-6) and 6.9 x 10(-6) Omega cm(2), respectively. Utilizing such metallization structure for InGaP/InGaAs/Ge triple-junction device structure solar cells were fabricated that delivered conversion efficiency of 23.11%, which is average efficiency for the above device structure.
URI: http://dx.doi.org/10.1109/LED.2014.2361923
http://hdl.handle.net/11536/123865
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2361923
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 12
起始頁: 1275
結束頁: 1277
顯示於類別:期刊論文


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