標題: Improvement of Resistive Switching Uniformity for Al-Zn-Sn-O-Based Memory Device With Inserting HfO2 Layer
作者: Liu, Po-Tsun
Fan, Yang-Shun
Chen, Chun-Ching
光電工程學系
Department of Photonics
關鍵字: Resistive switching;RRAM;AZTO;localized conducting filament
公開日期: 1-十二月-2014
摘要: This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.
URI: http://dx.doi.org/10.1109/LED.2014.2363491
http://hdl.handle.net/11536/123864
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2363491
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 12
起始頁: 1233
結束頁: 1235
顯示於類別:期刊論文


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  1. 000345575400024.pdf