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dc.contributor.authorShih, Yi-Senen_US
dc.contributor.authorLin, Pei-Yinen_US
dc.contributor.authorChen, Jr-Yuen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2015-07-21T11:21:00Z-
dc.date.available2015-07-21T11:21:00Z-
dc.date.issued2014-12-15en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matlet.2014.08.132en_US
dc.identifier.urihttp://hdl.handle.net/11536/123860-
dc.description.abstractOn semipolar GaN(1 1 (2) over bar 2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(1 1 (2) over bar 2)//GaN(1 1 (2) over bar 2) and [(1) over bar 1 0 0](ZnO)//[(1) over bar 1 0 0](GaN) which is expected for ZnO growth on GaN(1 1 (2) over bar 2), while the other is a newly found relationship of ZnO((1) over bar 0 1 (1) over bar)//GaN(0 0 0 2) and [5 (7) over bar 2 (3) over bar](ZnO)//[(1) over bar 1 0 0](GaN). (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectElectron microscopyen_US
dc.subjectX-ray techniquesen_US
dc.subjectThin filmsen_US
dc.titleGrowth orientations of semipolar ZnO on GaN(1 1 (2)over-bar 2)en_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matlet.2014.08.132en_US
dc.identifier.journalMATERIALS LETTERSen_US
dc.citation.volume137en_US
dc.citation.spage96en_US
dc.citation.epage98en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000345469700026en_US
dc.citation.woscount1en_US
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