標題: Growth orientations of semipolar ZnO on GaN(1 1 (2)over-bar 2)
作者: Shih, Yi-Sen
Lin, Pei-Yin
Chen, Jr-Yu
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Electron microscopy;X-ray techniques;Thin films
公開日期: 15-十二月-2014
摘要: On semipolar GaN(1 1 (2) over bar 2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(1 1 (2) over bar 2)//GaN(1 1 (2) over bar 2) and [(1) over bar 1 0 0](ZnO)//[(1) over bar 1 0 0](GaN) which is expected for ZnO growth on GaN(1 1 (2) over bar 2), while the other is a newly found relationship of ZnO((1) over bar 0 1 (1) over bar)//GaN(0 0 0 2) and [5 (7) over bar 2 (3) over bar](ZnO)//[(1) over bar 1 0 0](GaN). (C) 2014 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.matlet.2014.08.132
http://hdl.handle.net/11536/123860
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2014.08.132
期刊: MATERIALS LETTERS
Volume: 137
起始頁: 96
結束頁: 98
顯示於類別:期刊論文


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  1. 000345469700026.pdf