標題: GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer
作者: Yeh, Pinghui Sophia
Yu, Meng-Chun
Lin, Jia-Huan
Huang, Ching-Chin
Liao, Yen-Chao
Lin, Da-Wei
Fan, Jia-Rong
Kuo, Hao-Chung
光電工程學系
Department of Photonics
關鍵字: Resonant-cavity light-emitting diode;GaN-based LED;current blocking layer;vertical cavity surface emitting laser
公開日期: 15-十二月-2014
摘要: GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10-and 5-mu m-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described.
URI: http://dx.doi.org/10.1109/LPT.2014.2362297
http://hdl.handle.net/11536/123859
ISSN: 1041-1135
DOI: 10.1109/LPT.2014.2362297
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 26
Issue: 24
起始頁: 2488
結束頁: 2491
顯示於類別:期刊論文


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