Title: GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer
Authors: Yeh, Pinghui Sophia
Yu, Meng-Chun
Lin, Jia-Huan
Huang, Ching-Chin
Liao, Yen-Chao
Lin, Da-Wei
Fan, Jia-Rong
Kuo, Hao-Chung
Department of Photonics
Keywords: Resonant-cavity light-emitting diode;GaN-based LED;current blocking layer;vertical cavity surface emitting laser
Issue Date: 15-Dec-2014
Abstract: GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10-and 5-mu m-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described.
URI: http://dx.doi.org/10.1109/LPT.2014.2362297
ISSN: 1041-1135
DOI: 10.1109/LPT.2014.2362297
Volume: 26
Issue: 24
Begin Page: 2488
End Page: 2491
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