標題: Impedance behavior of spin-valve transistor
作者: Peng, TY
Chen, SY
Hsieh, LC
Lo, CK
Huang, YW
Chien, WC
Yao, YD
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 15-Apr-2006
摘要: The magnetoimpedance (MZ) effect of the pseudo-spin-valve transistor (PSVT) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The PSVT can be regarded as a complex combination of resistors, inductors, and capacitors, while the impedance (Z) consists of a real part, the resistance (R), and an imaginary part, the reactance (X). Besides, all these components exhibit magnetic hysteresis. It is due to the frequency dependent behavior that R does not reach a minimum at the resonant frequency (f(r)). The frequency dependences of MZ and MX ratios cross zero at f(x)=6.5 MHz and at f(r)=3.65 MHz, respectively. The shape of magnetoreactance (MX) loop is reverse to the magnetoresistance (MR) loop; furthermore, MX ratio changes sign from negative at f < f(r) to positive at f>f(r). The MZ loop also reverses shape and sign after crossing f(x). For instance, the MZ loop with a ratio of 0.077% at 6 MHz switches to -0.086% and -0.125% at 7 and 8 MHz, respectively. (C) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2177125
http://hdl.handle.net/11536/12369
ISSN: 0021-8979
DOI: 10.1063/1.2177125
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 99
Issue: 8
結束頁: 
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