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dc.contributor.authorLi, L. C.en_US
dc.contributor.authorSung, Y. T.en_US
dc.contributor.authorChang, C. W.en_US
dc.contributor.authorSuen, Y. W.en_US
dc.contributor.authorChen, K. Y.en_US
dc.contributor.authorLiang, C. T.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorLee, B. C.en_US
dc.contributor.authorLee, C. P.en_US
dc.date.accessioned2014-12-08T15:16:47Z-
dc.date.available2014-12-08T15:16:47Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn1386-9477en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physe.2009.11.074en_US
dc.identifier.urihttp://hdl.handle.net/11536/12345-
dc.description.abstractWe report the power (P) dependence of microwave (MW)-induced current (I(ph)) of a 1-mu m sized mesoscopic structure fabricated from two-dimensional electron gas in the GaAs/AlGaAs heterostructure at temperature of 1.4 K. MW signals were fed onto the sample through a loop antenna nearby and I(ph) is measured from a pair of ohmic contacts. We found that I(ph) is proportional to P at low-P limit; this dependence has been predicted for diffusion-limited electron transport in mesoscopic systems. By contrast, for large P. the dependence is extremely non-monotonous and complicated; even though its physical origin is still not clear so far, our data suggest it is related to the scattering processes from boundaries and impurities in the mesoscopic structure. We also investigated the symmetry properties against reversal of magnetic field (B) and found that the field-symmetric part of I(ph)(B) is consistent with the variation of magnetoresistance; there exists also an anti-symmetric part, which should be related to time-reversal-symmetry-breaking scattering mechanisms in the channel. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMicrowaveen_US
dc.subjectMesoscopicen_US
dc.subjectPhotocurrenten_US
dc.subjectMagnetic fielden_US
dc.titleMicrowave-induced DC currents in mesoscopic structuresen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.physe.2009.11.074en_US
dc.identifier.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.citation.volume42en_US
dc.citation.issue4en_US
dc.citation.spage1084en_US
dc.citation.epage1087en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000276541200110-
Appears in Collections:Conferences Paper


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