標題: Microwave-induced DC currents in mesoscopic structures
作者: Li, L. C.
Sung, Y. T.
Chang, C. W.
Suen, Y. W.
Chen, K. Y.
Liang, C. T.
Chen, Y. F.
Lee, B. C.
Lee, C. P.
電子工程學系及電子研究所
奈米科技中心
Department of Electronics Engineering and Institute of Electronics
Center for Nanoscience and Technology
關鍵字: Microwave;Mesoscopic;Photocurrent;Magnetic field
公開日期: 1-Feb-2010
摘要: We report the power (P) dependence of microwave (MW)-induced current (I(ph)) of a 1-mu m sized mesoscopic structure fabricated from two-dimensional electron gas in the GaAs/AlGaAs heterostructure at temperature of 1.4 K. MW signals were fed onto the sample through a loop antenna nearby and I(ph) is measured from a pair of ohmic contacts. We found that I(ph) is proportional to P at low-P limit; this dependence has been predicted for diffusion-limited electron transport in mesoscopic systems. By contrast, for large P. the dependence is extremely non-monotonous and complicated; even though its physical origin is still not clear so far, our data suggest it is related to the scattering processes from boundaries and impurities in the mesoscopic structure. We also investigated the symmetry properties against reversal of magnetic field (B) and found that the field-symmetric part of I(ph)(B) is consistent with the variation of magnetoresistance; there exists also an anti-symmetric part, which should be related to time-reversal-symmetry-breaking scattering mechanisms in the channel. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.physe.2009.11.074
http://hdl.handle.net/11536/12345
ISSN: 1386-9477
DOI: 10.1016/j.physe.2009.11.074
期刊: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume: 42
Issue: 4
起始頁: 1084
結束頁: 1087
Appears in Collections:Conferences Paper


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