標題: Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
作者: Lee, YJ
Hwang, JM
Hsu, TC
Hsieh, MH
Jou, MJ
Lee, BJ
Lu, TC
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: GaN;light-emitting diode (LED);sapphire chemical wet etching
公開日期: 1-May-2006
摘要: GaN-based light-emitting diodes (LEDs) with emitting wavelength of 450 nm were grown on patterned sapphire substrates (PSSs) fabricated by chemical wet etching. The crystallography-etched facet was {1-102} R-plane with a 57 degrees against {001} C-axis and had superior capability for enhancing light extraction efficiency. The light output power of the PSS LED was 1.15 times higher than that of the conventional LED at an injection current of 20 mA. The output power and external quantum efficiency were estimated to be 9 mW and 16.4%, respectively. The improvement was attributed not only to geometrical shapes of {1-102} crystallography-etched facets that efficiently scatter the guided light to find escape cones, but also to dislocation density reduction by adopting the PSS growth scheme.
URI: http://dx.doi.org/10.1109/LPT.2006.874737
http://hdl.handle.net/11536/12320
ISSN: 1041-1135
DOI: 10.1109/LPT.2006.874737
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 18
Issue: 9-12
起始頁: 1152
結束頁: 1154
Appears in Collections:Articles


Files in This Item:

  1. 000238708300052.pdf