標題: Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memory
作者: Lin, YH
Chien, CH
Chang, CY
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-2006
摘要: In this article, we demonstrate the effect of the postdeposition annealing for the HfO2 trapping layer on the performance of the Si-oxide-nitride-oxide-silicon-type flash memories. It was found that the memory window becomes larger while the retention and endurance characteristics get worse as the annealing temperature increases. This was ascribed to the larger amount and the shallower energy levels of the crystallization-induced traps as compared to the traps presented in the as-fabricated HfO2 film. Finally, in the aspect of disturbances, we show only insignificant read, drain, and gate disturbances presented in the three samples in the normal operation. (c) 2006 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.2174021
http://hdl.handle.net/11536/12307
ISSN: 0734-2101
DOI: 10.1116/1.2174021
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume: 24
Issue: 3
起始頁: 682
結束頁: 685
Appears in Collections:Conferences Paper


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