標題: High-performance poly-silicon TFTs using HfO2 gate dielectric
作者: Lin, CP
Tsui, BY
Yang, MJ
Huang, RH
Chien, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hafnium dioxide (HfO2);high dielectric-constant dielectric;thin-film transistors (TFTs)
公開日期: 1-May-2006
摘要: High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-kappa (HFO2) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-kappa gate dielectric, excellent device performance can be achieved including high driving current, low subthreshold swing, low threshold voltage, and high ON/OFF current ratio. It should be noted that the O.N-state current of high-kappa. gate-dielectric TFTs is almost five times higher than that of SiO2 gate-dielectric TFTs. Moreover, superior threshold-voltage (V-th) rolloff property is also demonstrated. All of these results suggest that high-kappa gate dielectric is a good choice for high-performance TFTs.
URI: http://dx.doi.org/10.1109/LED.2006.872832
http://hdl.handle.net/11536/12305
ISSN: 0741-3106
DOI: 10.1109/LED.2006.872832
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 5
起始頁: 360
結束頁: 363
Appears in Collections:Articles


Files in This Item:

  1. 000237602300017.pdf