標題: Catalyst-free GaN nanorods grown by metalorganic molecular beam epitaxy
作者: Kuo, SY
Kei, CC
Hsiao, CN
Chao, CK
Lai, FI
Kuo, HC
Hsieh, WF
Wang, SC
光電工程學系
Department of Photonics
關鍵字: catalyst free;GaN nanorod;metalorganic molecular-beam epitaxy;nanotechnology
公開日期: 1-May-2006
摘要: High-density GaN nanorods with outstanding crystal quality were grown on c-sapphire substrates by radio-frequency plasma-assisted metalorganic molecular beam epitaxy under catalyst- and template-free growth condition. Morphological and structural characterization of the GaN nanorods was employed by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy (HRTEM). These results indicate that the rod number density can reach 1 x 10(10) cm(-2) and the nanorods are well-aligned with preferentially oriented in the c-axis direction. Meanwhile, no metallic (Ga) droplet was observed at the end of the rods, which is the intrinsic feature of vapor-liquid-solid method. Nanorods with no traces of any extended defects, as confirmed by TEM, were obtained as well. In addition, optical investigation was carried out by temperature- and power-dependent micro-photoluminescence (mu-PL). The PL peak energies are red-shifted with increasing excitation power, which is attributed to many-body effects of free carriers under high excitation intensity. The growth mechanism is discussed on the basis of the experimental results. Catalyst-free GaN nanorods presented here might have a high potential for applications in nanoscale photonic devices.
URI: http://dx.doi.org/10.1109/TNANO.2006.874055
http://hdl.handle.net/11536/12281
ISSN: 1536-125X
DOI: 10.1109/TNANO.2006.874055
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 5
Issue: 3
起始頁: 273
結束頁: 277
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