標題: High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates
作者: Wu, YC
Chang, TC
Liu, PT
Chou, CW
Wu, YC
Tu, CH
Chang, CY
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: metal-induced lateral-crystallization (MILC);multigate;nanowire;thin-film transistor (TFT)
公開日期: 1-五月-2006
摘要: In this study, pattern-dependent nickel (Ni) metal-induced lateral-crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with ten nanowire channels and multigate structure were fabricated and characterized. Experimental results reveal that applying ten nanowire channels improves the performance of an Ni-MILC poly-Si TFT, which thus has a higher ON current, a lower leakage current, and a lower threshold voltage (V-th) than single-channel TFTs. Furthermore, the experimental results reveal that combining the multigate structure and ten nanowire channels further enhances the entire performance of Ni-MILC TFTs, which thus have a low leakage current, a high ON/OFF ratio, a low Vth, a steep subthreshold swing, and kink-free output characteristics. The multigate structure with ten-nanowire-channel Ni-MILC TFTs has a few poly-Si grain boundary defects, a low lateral electrical field, and a gate-channel shortening effect, all of which are associated with such high-performance characteristics.
URI: http://dx.doi.org/10.1109/TNANO.2006.869948
http://hdl.handle.net/11536/12277
ISSN: 1536-125X
DOI: 10.1109/TNANO.2006.869948
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 5
Issue: 3
起始頁: 157
結束頁: 162
顯示於類別:會議論文


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  1. 000237822400003.pdf