Title: High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates
Authors: Chin, A
Lee, K
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
Issue Date: 10-Jun-1996
Abstract: We report the growth of high quality molecular beam epitaxy (MBE) AlGaAs, AlGaAs/GaAs/ AlGaAs, and AlAs/GaAs/AlAs multiple quantum wells (MQWs) on (111)A GaAs substrates. For (111)A AlGaAs/GaAs/AlGaAs MQWs, there is no detectable photoluminescence (PL) at a growth temperature of 640 degrees C, and narrow PL linewidth can only be obtained at growth temperatures higher than 680 degrees C. A PL linewidth of 13.8 meV is measured at the growth temperature of 720 degrees C. To understand such growth temperature dependence of (111)A MQWs, we have investigated the material quality of (111)A AlGaAs at different growth temperatures. The strong PL integrated intensity of 640 degrees C grown (111)A AlGaAs indicates good material quality and a low concentration of non-radiative recombination centers. However, the broad PL linewidth of 640 degrees C grown (111)A AlGaAs indicates the strong compositional modulation and a rough growth front. We have used AlAs instead of AlGaAs in order to reduce the compositional modulation and smooth the interface. A PL linewidth of 13.4 meV is measured for 640 degrees C grown (111)A AlAs/GaAs/AlAs MQWs, which is the narrowest value for (111)A MQWs. (C) 1996 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.115785
ISSN: 0003-6951
DOI: 10.1063/1.115785
Volume: 68
Issue: 24
Begin Page: 3437
End Page: 3439
Appears in Collections:Articles