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dc.contributor.authorLai, FIen_US
dc.contributor.authorKuo, SYen_US
dc.contributor.authorWang, JSen_US
dc.contributor.authorHsiao, RSen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorChi, Jen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorWang, HSen_US
dc.contributor.authorLiang, CTen_US
dc.contributor.authorChen, YFen_US
dc.date.accessioned2014-12-08T15:16:35Z-
dc.date.available2014-12-08T15:16:35Z-
dc.date.issued2006-05-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2006.02.028en_US
dc.identifier.urihttp://hdl.handle.net/11536/12250-
dc.description.abstractThe temperature dependence of optical properties of InGaAsN/GaAs single-quantum wells grown by solid source molecular beam epitaxy (MBE) with N contents varied from 0% to 5.3% was investigated by photoluminescence (PL). The evolution of the peak positions of InGaAs/GaAs sample are in agreement with the empirical Varshni model. However, pronounced temperature-dependent S-shaped peak positions and N-shaped linewidth were observed in PL spectra while increasing nitrogen concentration. The activation energy of InGaAsN/GaAs single quantum well (SQWs) is observed to decrease with nitrogen incorporation, which is contrary to the expectation of the bandgap reduction. This phenomenon suggests that the existence of defect-related nonradiative processes is due to nitrogen incorporation. The results of measurement demonstrate that the nitrogen incorporation into the InGaAsN has strong influence not only on carrier localization but also on the optical quality. In addition, the growth of high nitrogen content (5.3%) shows that the InGaAsN might be the potential candidate for long-wavelength optoelectronic devices. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMBEen_US
dc.subjectsingle quantum wellen_US
dc.subjectInGaAsNen_US
dc.subjectlong-wavelength applicationen_US
dc.titleTemperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2006.02.028en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume291en_US
dc.citation.issue1en_US
dc.citation.spage27en_US
dc.citation.epage33en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000237993900006-
dc.citation.woscount6-
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