標題: An improved parameter-extraction method of SiGe HBTs' substrate network
作者: Chen, HY
Chen, KM
Huang, GW
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SiGeHBTs;substrate network parameter extraction
公開日期: 1-Jun-2006
摘要: In this letter, an improved method for substrate network parameter extraction of SiGe heterojunction bipolar transistors (HBTs) is proposed. It is found that, without taking the intrinsic circuit elements into consideration, the conductance of substrate network will be underestimated while the susceptance of substrate network will be overestimated. Therefore, an iteration procedure is developed,to determine the intrinsic circuit elements of SiGe HBTs first. The intrinsic circuit elements are then applied to remove their influence on the substrate network parameter extraction. Compared with the conventional method, the proposed one can avoid some unphysical modeling results and provide reliable substrate network parameters.
URI: http://dx.doi.org/10.1109/LMWC.2006.875630
http://hdl.handle.net/11536/12228
ISSN: 1531-1309
DOI: 10.1109/LMWC.2006.875630
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 16
Issue: 6
起始頁: 321
結束頁: 323
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