標題: HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
作者: Wu, CH
Hung, BF
Chin, A
Wang, SJ
Yen, FY
Hou, YT
Jin, Y
Tao, HJ
Chen, SC
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HfAlON;MOSFET;YbSi
公開日期: 1-Jun-2006
摘要: The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAION gate dielectric with a 1.7-nm EOT. After a 600 degrees C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm(2)/V(.)s. They have additional merit of a process compatible with current very large scale integration fabrication lines.
URI: http://dx.doi.org/10.1109/LED.2006.874778
http://hdl.handle.net/11536/12203
ISSN: 0741-3106
DOI: 10.1109/LED.2006.874778
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 6
起始頁: 454
結束頁: 456
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