Title: Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic. light-emitting diodes
Authors: Chu, TY
Chen, SY
Chen, JF
Chen, CH
電子物理學系
顯示科技研究所
友訊交大聯合研發中心
Department of Electrophysics
Institute of Display
D Link NCTU Joint Res Ctr
Keywords: inverted organic light emitting device (IOLED);electron injection;indium tin oxide (ITO)
Issue Date: 1-Jun-2006
Abstract: We have fabricated a highly efficient inverted bottom-emission organic light-emitting diode (IBOLED) based on an indium-tin oxide (ITO) bottom cathode deposited with an ultrathin 1 nm layer of Mg to promote electron injection. The threshold voltage of this IBOLED with a structure of ITO/Mg/Alq(3)/NPB/WO3/Al was 4.2V and an efficiencies of 4.66cd/A and 1.51 1m/W were achieved at an operational voltage of 8.9 V and a brightness of 940 cd/m(2). In comparison with an ITO/Alq(3) bottom cathode composition, a reduction in drive voltage from 13.8 to 7.8 V in voltage was obtained at 1 mA/cm(2). A charge-transfer dipole model is proposed to rationalize the enhanced electron injection.
URI: http://dx.doi.org/10.1143/JJAP.45.4948
http://hdl.handle.net/11536/12190
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.4948
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 6A
Begin Page: 4948
End Page: 4950
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