標題: Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O-2
作者: Lai, CH
Lin, BC
Chang, KM
Hsieh, KY
Lai, YL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: oxynitride;chemical oxide;ultrathin;boron penetration;nitridation
公開日期: 1-Jun-2006
摘要: We have proposed an approach for growing robust ultrathin oxynitride using conventional thermal processes with the capability of preventing boron penetration. In this method, we obtain oxynitride with high nitrogen concentration (approximate to 13 at. %) on the top and low interface state density (D-it = 2 x 10(10) cm(-2) eV(-1)). The films demonstrate excellent properties in terms of low Dit, low leakage current, high endurance in stressing and superior boron diffusion blocking behavior. This method does not involve any additional capital equipment [such as decoupled plasma nitridation (DPN) or remote plasma nitridation (RPN)] or gas (NO or N2O). In addition, it obtains high-quality oxynitride film with low thermal budget. Most importantly, this process is simple and fully compatible with current process technology. It would be important and interesting for process engineers engaged in the field of gate dielectrics. It is suitable for the next generation of ULSI technology.
URI: http://dx.doi.org/10.1143/JJAP.45.4898
http://hdl.handle.net/11536/12188
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.4898
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 6A
起始頁: 4898
結束頁: 4902
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