標題: Strain relaxation and induced defects in InAsSb self-assembled quantum dots
作者: Chen, J. F.
Hsiao, R. S.
Huang, W. D.
Wu, Y. H.
Chang, L.
Wang, J. S.
Chi, J. Y.
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 5-Jun-2006
摘要: The onset of strain relaxation and induced defects in InAs0.94Sb0.06 quantum dots are investigated. We show that the relaxation causes partial carrier depletion in the dots and drastic carrier depletion in the top GaAs layer due to the introduction of two defect traps At 0.35 and 0.64 eV. This result is consistent with transmission electron microscopy data which show misfit dislocations on the edges of the dot upper boundary and threading dislocations in the top GaAs layer. The bottom GaAs layer is dislocation-free, and thus the strain relaxation may initially occur on the edges of the dots. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2212064
http://hdl.handle.net/11536/12162
ISSN: 0003-6951
DOI: 10.1063/1.2212064
期刊: APPLIED PHYSICS LETTERS
Volume: 88
Issue: 23
結束頁: 
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