標題: Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs
作者: Liao, YS
Shi, JW
Wu, YS
Kuo, HC
Feng, M
Lin, GR
光電工程學系
Department of Photonics
公開日期: 12-Jun-2006
摘要: We demonstrate the optical heterodyne diagnostics and high saturation power characteristics of a novel undoped InP sandwiched In0.53Ga0.47As p-i-n photodiode with a partially p-doped photoabsorption layer, which is grown on a linearly graded metamorphic InxGa1-xP buffered GaAs substrate layer and exhibits an excellent low dark current density of 3.6 x 10(-7) A/cm(2). Such a top-illuminated optical receiver exhibits an illuminating window of 60-mu m diameter, which performs ultra-linear power handling capability up to 18 dBm at 1550 nm, providing a maximum photocurrent of 35 mA under a reverse bias of 9 volts. These result in extremely high current bandwidth and bandwidth-responsivity products of 350 mA center dot GHz and 4.8 GHz center dot A/W, respectively, at receiving frequency of up to 10 GHz. (c) 2006 Optical Society of America.
URI: http://dx.doi.org/10.1364/OE.14.005031
http://hdl.handle.net/11536/12153
ISSN: 1094-4087
DOI: 10.1364/OE.14.005031
期刊: OPTICS EXPRESS
Volume: 14
Issue: 12
起始頁: 5031
結束頁: 5037
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