標題: Band gap engineering and spatial confinement of optical phonon in ZnO quantum dots
作者: Lin, KF
Cheng, HM
Hsu, HC
Hsieh, WF
光電工程學系
Department of Photonics
公開日期: 26-六月-2006
摘要: Both band gap engineering and spatial confinement of optical phonon were observed depending upon the size of ZnO quantum dots at room temperature. Size-dependent blueshifts of photoluminescence and absorption spectra reveal the quantum confinement effect. The measured Raman spectral shift and asymmetry for the E-2(high) mode caused by localization of optical phonons agree well with that calculated by using the modified spatial correlation model. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2218775
http://hdl.handle.net/11536/12131
ISSN: 0003-6951
DOI: 10.1063/1.2218775
期刊: APPLIED PHYSICS LETTERS
Volume: 88
Issue: 26
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000238717200073.pdf