標題: A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etching
作者: Cheng, HC
Kang, TK
Ku, TK
Dai, BT
Chen, LP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1996
摘要: A novel technique, which uses Cl-2/O-2 mixed gas in the electron cyclotron resonance (ECR) etching system, has been proposed to remove the antenna charging effect of the MOS capacitors with 5-nm-thick oxides during polysilicon gate etching. The Cl-2/O-2 can cause the trenching effect and prevents the gate oxide from the charging damage. Furthermore, the ECR system can provide high polysilicon/oxide selectivity so that the Si substrate under gate oxide is not directly bombarded by the ions. Consequently, the E(bd) degradation of the MOS capacitors disappears as the trenching effect is apparent by using moderate Cl-2/O-2 mixed gas.
URI: http://dx.doi.org/10.1109/55.506360
http://hdl.handle.net/11536/1213
ISSN: 0741-3106
DOI: 10.1109/55.506360
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 17
Issue: 7
起始頁: 338
結束頁: 340
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UV31900007.pdf