標題: Nitride-based LEDs with nano-scale textured sidewalls using natural lithography
作者: Huang, HW
Kuo, HC
Chu, JT
Lai, CF
Kao, CC
Lu, TC
Wang, SC
Tsai, RJ
Yu, CC
Lin, CF
光電工程學系
Department of Photonics
公開日期: 28-Jun-2006
摘要: This investigation describes the development of a InGaN/GaN light-emitting diode (LED) with textured sidewalls using natural lithography with polystyrene spheres (PSs) as the etching mask and dry etching the epitaxial layers of LEDs to achieve nano-scale textured sidewalls. The LED with textured sidewalls increased the output power of the InGaN - GaN multiple quantum well (MQW) LEDs by a factor of 1.3, indicating that the LED with nano-scale textured sidewalls had larger light extraction efficiency. The wall-plug efficiency of nitride-based LEDs was increased by 30% using textured sidewalls.
URI: http://dx.doi.org/10.1088/0957-4484/17/12/030
http://hdl.handle.net/11536/12124
ISSN: 0957-4484
DOI: 10.1088/0957-4484/17/12/030
期刊: NANOTECHNOLOGY
Volume: 17
Issue: 12
起始頁: 2998
結束頁: 3001
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