標題: Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes
作者: Chang, Yi-An
Yu, Chun-Lung
Wu, I-Tsung
Kuo, Hao-Chung
Lu, Tien-Chang
Lai, Fang-I
Laih, Li-Wen
Laih, Li-Horng
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: InGaAlP;light-emitting diode (LED);optical;communication;optoelectronic device;resonant cavity
公開日期: 1-Jul-2006
摘要: Visible InGaP-InGaAlP resonant-cavity light-emitting diodes with low-temperature sensitivity output characteristics were demonstrated. By means of widening the resonant cavity to a thickness of three wavelength (3 A), the degree of power variation between 25 degrees C and 95 degrees C for the devices biased at 20 mA was apparently reduced from -2.1 dB for the standard structure design (1 - lambda avity) to -0.6 dB. An output power of 2.4 mW was achieved at 70 mA. The external quantum efficiency achieved a maximum of 3% at 13 mA and dropped slowly with increased current for the device. The external quantum efficiency at 20 mA dropped only 14% with elevated temperature from 25 degrees C to 95 degrees C. The current dependent far-field patterns also showed that the emission always took place perfectly in the normal direction, which was suitable for plastic fiber data transmission.
URI: http://dx.doi.org/10.1109/LPT.2006.879931
http://hdl.handle.net/11536/12117
ISSN: 1041-1135
DOI: 10.1109/LPT.2006.879931
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 18
Issue: 13-16
起始頁: 1690
結束頁: 1692
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