標題: Investigation of NiSi fully-silicided gate on SiO2 and HfO2 for applications in metal-oxide-semiconductor field-effect transistors
作者: Huang, Chih-Feng
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: FUSI gate;silicide;Fermi-pinning;NiSi;metal gate
公開日期: 1-Jul-2006
摘要: Effective work function modulation (phi(m,eff)) and the thermal/electrical stability of NiSi fully-silicided (FUSI) gates on SiO2 and HfO2 are investigated. A new method, implant-to-silicide, differing from the,pre-doped method, is used to realize Phi(m,eff) adjustments. The Phi(m,eff) of NiSi FUSI gates on SiO2 can be tuned by incorporating BF2+ or P+ dopants after silicidation. Nevertheless, the Fermi-pinning effect was observed in the NiSi/HfO2 gate which limits the Phi(m,eff) adjustment. A thin SiO2 interfacial layer can reduce the Fermi-pinning effect. A NiSi FUSI gate on SiO2 is thermally stable up to 600 degrees C. The thermal stress and impurity diffusion after a prolonged 600 degrees C annealing degraded the oxide integration. The temperature of the post-silicidation process should be as low as possible to lessen the thermal stress and impurity diffusion.
URI: http://dx.doi.org/10.1143/JJAP.45.5702
http://hdl.handle.net/11536/12101
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.5702
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 7
起始頁: 5702
結束頁: 5707
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