標題: Performances of Ni-induced lateral crystallization thin film transistors with (111) and (112) needle grains
作者: Hou, Chih-Yuan
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: LTPS;poly-Si;imprint;thin-film transistors;Ni-metal-induced lateral crystallization
公開日期: 1-Jul-2006
摘要: Thin-film transistors (TFFs) fabricated using (III) and 112) needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (mu(FE)), 4-fold-higher on/off current ratio (I-on/I-off), and 2.4-fold-lower leakage current (I-off) compared with those of the 111-TFT.
URI: http://dx.doi.org/10.1143/JJAP.45.5667
http://hdl.handle.net/11536/12099
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.5667
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 7
起始頁: 5667
結束頁: 5670
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