標題: Deep levels in SnTe-doped GaSb grown on GaAs by molecular beam epitaxy
作者: Chen, JF
Chen, NC
Liu, HS
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
關鍵字: GaSb;SnTe dopants;deep levels;admittance spectroscopy
公開日期: 1-七月-1996
摘要: A dominant deep level with an activation energy of 0.23-0.26 eV was observed by admittance spectroscopy in SnTe-doped GaSb layers grown directly on GaAs substrates by molecular beam epitaxy (MBE). The Sb-4/Ga Bur ratio was found to affect the Hall mobility and the concentration of the deep level in a similar way, with an optimal beam equivalent pressure ratio of around 7 obtained for GaSb grown at 550 degrees C, which should correspond to the lowest ratio at which a Sb-stabilized surface reconstruction can be maintained. This electron level is commonly detected in n-type (SnTe-, S- and Te-doped) GaSb, but not in undoped p-type GaSb, suggesting that the level is not a simple native defect, but may be connected with the impurity used for n-type doping of GaSb.
URI: http://dx.doi.org/10.1143/JJAP.35.L813
http://hdl.handle.net/11536/1209
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.L813
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 35
Issue: 7A
起始頁: L813
結束頁: L815
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UW82400004.pdf