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dc.contributor.authorLai, Fang-Ien_US
dc.contributor.authorKuo, S. Y.en_US
dc.contributor.authorWang, J. S.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.authorWang, H. S.en_US
dc.contributor.authorLiang, C. T.en_US
dc.contributor.authorChen, Y. F.en_US
dc.date.accessioned2014-12-08T15:16:18Z-
dc.date.available2014-12-08T15:16:18Z-
dc.date.issued2006-07-01en_US
dc.identifier.issn0734-2101en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2208996en_US
dc.identifier.urihttp://hdl.handle.net/11536/12080-
dc.description.abstractA series of InGaAsN/GaAs single-quantum wells (SQWs) with N contents varied from 0% to 5.3% were grown by molecular-beam epitaxy using a solid As and a nitrogen plasma sources. The impact of nitrogen concentration on the optical properties, as determined by the temperature dependence of photoluminescence (PL), of a 6 nm SQW was investigated. In the low-temperature region, a pronounced temperature-dependent S-shaped peak position was observed in PL spectra while increasing the nitrogen concentration. Quenching behavior reveals that the defect-related nonradiative processes might be enhanced in the highly nitrogen incorporated samples and thus influence the recombination dynamics. In addition, the evolution of the peak position of the InGaAsN/GaAs samples was in agreement with the empirical Varshni model in the high-temperature region. A significant reduction in the temperature dependence of the emission peak position is analyzed as well, and further confirms the prediction of proposed band anticrossing model of the electronic structure of III-N-V alloys. (c) 2006 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleEffect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wellsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.2208996en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Aen_US
dc.citation.volume24en_US
dc.citation.issue4en_US
dc.citation.spage1223en_US
dc.citation.epage1227en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000239048100058-
Appears in Collections:Conferences Paper


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