標題: Optical properties of high density InGaN QDs grown by MOCVD
作者: Lee, CK
Hsu, JH
Wang, DC
Chang, YH
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: indium gallium nitride;quantum dot;photoluminescence;time-resolved photoluminescence
公開日期: 1-Jul-2006
摘要: In this article, we investigate the relaxation time constant and optical properties of InGaN QDs following different durations of SiNx treatment. We find that the smaller size QDs have smaller red shift as temperature increasing, only about 10 meV. Time-resolved PL at various emitting wavelength of the three samples is also investigated. Decreasing time constant as increasing QDs size is observed. Besides, we also find the decreasing time constant with shorter wavelength. Meanwhile, decreasing time constant as increasing emitting wavelength is characterized and attributed as an increasing confinement of excitons in QDs with higher localization energy and thus with a higher electron-hole overlap. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.msec.2005.09.050
http://hdl.handle.net/11536/12077
ISSN: 0928-4931
DOI: 10.1016/j.msec.2005.09.050
期刊: MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
Volume: 26
Issue: 5-7
起始頁: 975
結束頁: 978
Appears in Collections:Conferences Paper


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